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absolute maximum ratings parameter units i d @ v gs = 12v, t c = 25c continuous drain current 35* i d @ v gs = 12v, t c = 100c continuous drain current 30 i dm pulsed drain current 140 p d @ t c = 25c max. power dissipation 150 w linear derating factor 1.2 w/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy 500 mj i ar avalanche current 35 a e ar repetitive avalanche energy 15 mj dv/dt peak diode recovery dv/dt 3.5 v/ns t j operating junction -55 to 150 t stg storage temperature range lead temperature 300 (0.063 in.(1.6mm) from case for 10s) weight 9.3 (typical) g pre-irradiation international rectifiers rad-hard tm hexfet ? technology provides high performance power mosfets forspace applications. this technology has over a decade of proven performance and reliability in satellite applications. these devices have been characterized for both total dose and single event effects (see). the combination of low rdson and low gate charge reduces the power losses in switching applications such as dc to dc converters and motor control. these devices retain all of the well established advantages of mosfets such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. o c a radiation hardenedpower mosfet thru-hole (to-254aa) www.irf.com 1 product summary part number radiation level r ds(on) i d qpl part number irhm7054 100k rads (si) 0.027 ? 35a* jansr2n7394 irhm3054 300k rads (si) 0.027 ? 35a* jansf2n7394 IRHM4054 500k rads (si) 0.027 ? 35a* jansg2n7394 irhm8054 1000k rads (si) 0.040 ? 35a* jansh2n7394 irhm7054 jansr2n7394 60v, n-channel ref: mil-prf-19500/603 rad-hard ? hexfet ? technology to-254aa features: single event effect (see) hardened low r ds(on) low total gate charge simple drive requirements ease of paralleling hermetically sealed ceramic package light weight

pd - 90887g downloaded from: http:///
2 www.irf.com irhm7054, jansr2n7394 pre- irradiation note: corresponding spice and saber models are available on international rectifier website.

source-drain diode ratings and characteristics parameter min typ max units t est conditions i s continuous source current (body diode) 35* i sm pulse source current (body diode) 140 v sd diode forward voltage 1.4 v t j = 25c, i s = 35a, v gs = 0v t rr reverse recovery time 280 ns t j = 25c, i f = 35a, di/dt 100a/ s q rr reverse recovery charge 2.2 c v dd 50v t on forward turn-on time intrinsic turn-on time is negligible. turn-on speed is substantially controlled by l s + l d . a thermal resistance parameter min typ max units t est conditions r thjc junction-to-case 0.83 r thja junction-to-ambient 48 c/w typical socket mount r thcs case-to-sink 0.21 electrical characteristics @ tj = 25c (unless otherwise specified) parameter min typ max units t est conditions bv dss drain-to-source breakdown voltage 60 v v gs = 0v, i d = 1.0ma ? bv dss / ? t j temperature coefficient of breakdown 0.053 v/c reference to 25c, i d = 1.0ma voltage r ds(on) static drain-to-source on-state 0.027 ? v gs = 12v, i d = 30a resistance 0.030 v gs = 12v, i d = 35a v gs(th) gate threshold voltage 2.0 4.0 v v ds = v gs , i d = 1.0ma g fs forward transconductance 12 s ( )v ds > 15v, i ds = 30a i dss zero gate voltage drain current 25 v ds = 48v ,v gs =0v 250 v ds = 48v, v gs = 0v, t j = 125c i gss gate-to-source leakage forward 100 v gs = 20v i gss gate-to-source leakage reverse -100 v gs = -20v q g total gate charge 200 v gs =12v, i d = 35a q gs gate-to-source charge 60 nc v ds = 30v q gd gate-to-drain (miller) charge 75 t d (on) turn-on delay time 27 v dd =30v, i d = 35a t r rise time 100 v gs =12v, r g = 2.35 ? t d (off) turn-off delay time 75 t f fall time 75 l s + l d total inductance 6.8 measured from drain lead (6mm /0.25in from package) to source lead (6mm /0.25in. from package) with source wires internally bonded from source pin to drain pad c iss input capacitance 4100 v gs = 0v, v ds = 25v c oss output capacitance 2000 p f f = 1.0mhz c rss reverse transfer capacitance 560 na ? nh ns a * current is limited by package downloaded from: http:///
www.irf.com 3 pre-irradiation irhm7054, jansr2n7394 table 1. electrical characteristics @ tj = 25c, post total dose irradiation parameter up to 500k rads(si) 1 1000k rads (si) 2 units test conditions min max min max bv dss drain-to-source breakdown voltage 60 60 v v gs = 0v, i d = 1.0ma v gs(th) gate threshold voltage 2.0 4.0 1.25 4.5 v gs = v ds , i d = 1.0ma i gss gate-to-source leakage forward 100 100 na v gs = 20v i gss gate-to-source leakage reverse -100 -100 v gs = -20 v i dss zero gate voltage drain current 25 50 a v ds = 48v, v gs = 0v r ds(on) static drain-to-source 0.027 0.04 ? v gs = 12v, i d = 30a on-state resistance (to-3) r ds(on) static drain-to-source 0.027 0.04 ? v gs = 12v, i d = 30a on-state resistance (to-254aa) international rectifier radiation hardened mosfets are tested to verify their radiation hardness capability. the hardness assurance program at international rectifier is comprised of two radiation environments. every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the to-3 package. both pre- and post-irradiation performance are tested and specified using the same drive circuitry and testconditions in order to provide a direct comparison. radiation characteristics 1. part numbers irhm7054 (jansr2n7394), irhm3054 (jansf2n7394), IRHM4054 (jansg2n7394)2. part number irhm8054 (jansh2n7394) fig a. single event effect, safe operating area v sd diode forward voltage 1.4 1.4 v v gs = 0v, i s = 35a international rectifier radiation hardened mosfets have been characterized in heavy ion environment for single event effects (see). single event effects characterization is illustrated in fig. a and table 2.

0 10 20 30 40 50 60 70 0 -5 -10 -15 -20 vgs vds br i table 2. single event effect safe operating area ion let energy range v ds (v) (mev/(mg/cm 2 )) (mev) (m) @ v gs =0v @ v gs =-5v @ v gs =-10v @ v gs =-15v @ v gs =-20v br 36.8 305 39 60 60 45 40 30 i 59.9 345 32.8 40 35 30 25 20 downloaded from: http:///
4 www.irf.com irhm7054, jansr2n7394 pre- irradiation

10 100 1000 1 10 100 20s pulse width t = 25 c j top bottom vgs 15v 12v 10v 9.0v 8.0v 7.0v 6.0v 5.0v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 5.0v 10 100 1000 1 10 100 20s pulse width t = 150 c j top bottom vgs 15v 12v 10v 9.0v 8.0v 7.0v 6.0v 5.0v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 5.0v 10 100 1000 5 6 7 8 9 10 11 12 v = 25v 20s pulse width ds v , gate-to-source voltage (v) i , drain-to-source current (a) gs d t = 25 c j t = 150 c j -60 -40 -20 0 20 40 60 80 100 120 140 16 0 0.0 0.5 1.0 1.5 2.0 2.5 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 12v 50a downloaded from: http:///
www.irf.com 5 pre-irradiation irhm7054, jansr2n7394

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1 10 100 0 2000 4000 6000 8000 v , drain-to-source voltage (v) c, capacitance (pf) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted gs iss gs gd , ds rss gd oss ds gd c iss c oss c rss 0 40 80 120 160 20 0 0 4 8 12 16 20 q , total gate charge (nc) v , gate-to-source voltage (v) g gs for test circuit see figure i = d 13 35a v = 30v ds v = 48v ds 1 10 100 1000 0.4 1.0 1.6 2.2 2.8 3.4 4.0 v ,source-to-drain voltage (v) i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j 1 10 100 1000 1 10 100 100 0 operation in this area limited by r ds(on) single pulse t t = 150 c = 25 c j c v , drain-to-source voltage (v) i , drain current (a) i , drain current (a) ds d 100us 1ms 10ms downloaded from: http:///
6 www.irf.com irhm7054, jansr2n7394 pre- irradiation $

v ds 9 0% 1 0% v gs t d(on) t r t d(off) t f $
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v gs 25 50 75 100 125 150 0 10 20 30 40 50 t , case temperature ( c) i , drain current (a) c d limited by package 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) downloaded from: http:///
www.irf.com 7 pre-irradiation irhm7054, jansr2n7394 q g q gs q gd v g charge d.u.t. v d s i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - +, !

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t p v (br)dss i as r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v v gs 25 50 75 100 125 150 0 200 400 600 800 1000 1200 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 16a 22a 35a downloaded from: http:///
8 www.irf.com irhm7054, jansr2n7394 pre- irradiation pulse width 300 s; duty cycle 2% total dose irradiation with v gs bias. 12 volt v gs applied and v ds = 0 during irradiation per mil-std-750, method 1019, condition a. total dose irradiation with v ds bias. 48 volt v ds applied and v gs = 0 during irradiation per mll-std-750, method 1019, condition a. repetitive rating; pulse width limited by maximum junction temperature. v dd = 25v, starting t j = 25c, l= 0.9mh peak i l = 35a, v gs =12v i sd 35a, di/dt 150a/ s, v dd 60v, t j 150c foot notes: case outline and dimensions to-254aa ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 ir leominster : 205 crawford st., leominster, massachusetts 01453, usa tel: (978) 534-5776 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . data and specifications subject to change without notice. 05/2006 3.81 [.150] 0.12 [.005] 1.27 [.050] 1.02 [.040] 6.60 [.260] 6.32 [.249] c
3x 0.36 [.014] b a 1.14 [.045] 0.89 [.035] 2x 3.81 [.150] 20.32 [.800] 20.07 [.790] 13.84 [.545] 13.59 [.535] 3.78 [.149] 3.53 [.139] 17.40 [.685] 16.89 [.665] a 123 13.84 [.545] 13.59 [.535]
b 2. all dimensions are shown in millimeters [inches ]. 1. dimensioning & tolerancing per asme y14.5m-1994 . 4. conforms to jedec outline to-254aa. 3. controlling dimension: inch. caution beryllia warning per mil-prf-19500 package containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on themwhich will produce beryllia or beryllium dust. furthermore, beryllium oxide packages shall not be placed in acids that will produce fumes containing beryllium. pin assignment s 1 = drain 2 = source 3 = gate downloaded from: http:///

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